Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SOT-23-3 Published

By: Diodes Incorporated

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SOT-23-3

Mfr. Part#: DDTD113ZC-7-F
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Packaging

Tape & Reel (TR)

Package / Case

TO-236-3, SC-59, SOT-23-3

Mounting Type

Surface Mount

Transistor Type

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Supplier Device Package

SOT-23-3

Current - Collector (Ic) (Max)

500 mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Power - Max

200 mW

Frequency - Transition

200 MHz

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

Product Description :

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 200 MHz 200 mW Surface Mount SOT-23-3

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