N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3 Published

By: Microchip Technology

N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

Mfr. Part#: LND150N3-G
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Packaging

Bag

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

30mA (Tj)

Rds On (Max) @ Id, Vgs

1000Ohm @ 500µA, 0V

FET Feature

Depletion Mode

Power Dissipation (Max)

740mW (Ta)

Vgs(th) (Max) @ Id

-

Supplier Device Package

TO-92-3

Drive Voltage (Max Rds On, Min Rds On)

0V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

500 V

Input Capacitance (Ciss) (Max) @ Vds

10 pF @ 25 V

Product Description :

N-Channel 500 V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3

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