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ECCN |
EAR99 |
Part Status |
Active |
Fet Type |
P-Ch |
No of Channels |
1 |
Drain-to-Source Voltage [Vdss] |
30V |
Drain-Source On Resistance-Max |
4.1Ω |
Rated Power Dissipation |
350mW |
Qg Gate Charge |
0.55nC |
Gate-Source Voltage-Max [Vgss] |
8V |
Drain Current |
230mA |
Turn-on Delay Time |
19ns |
Turn-off Delay Time |
65ns |
Rise Time |
30ns |
Fall Time |
38ns |
Operating Temp Range |
-55°C to +150°C |
Gate Source Threshold |
0.9V |
Technology |
Si |
Input Capacitance |
31pF |
Package Style |
SOT-23 (SC-59,TO-236) |
Mounting Method |
Surface Mount |
P-Channel 30 V 4.1 Ohm 0.52 nC Surface Mount TrenchMOS FET - SOT-23