By: Nexperia USA Inc.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount TO-236AB
Mfr. Part#:
PDTC114ET,235
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Packaging |
Tape & Reel (TR) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
Transistor Type |
NPN - Pre-Biased |
Vce Saturation (Max) @ Ib, Ic |
150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) |
1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V |
Supplier Device Package |
TO-236AB |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Power - Max |
250 mW |
Frequency - Transition |
230 MHz |
Resistor - Base (R1) |
10 kOhms |
Resistor - Emitter Base (R2) |
10 kOhms |
Product Description :
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 MHz 250 mW Surface Mount TO-236AB