Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6 Published

By: Rohm Semiconductor

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

Mfr. Part#: UMD3NTR
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Packaging

Tape & Reel (TR)

Package / Case

6-TSSOP, SC-88, SOT-363

Mounting Type

Surface Mount

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Power - Max

150mW

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V

Frequency - Transition

250MHz

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

Supplier Device Package

UMT6

Product Description :

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT6

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