By: Rohm Semiconductor
LIST PRICE: CAD N/A each
You SAVE: CAD 0
Explore Our Unique Products. Uncover Distinctive Qualities, Innovative Features, and Exceptional Craftsmanship. Dive into a World Where Excellence Meets Design, Guiding Your Journey to Exceptional Choices.
Packaging |
Tube |
Package / Case |
TO-3PFM, SC-93-3 |
Mounting Type |
Through Hole |
Operating Temperature |
175°C (TJ) |
Technology |
SiCFET (Silicon Carbide) |
Fet Type |
N-Channel |
Current - Continuous Drain (Id) @ 25°C |
3.7A (Tc) |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1.1A, 18V |
FET Feature |
- |
Power Dissipation (Max) |
35W (Tc) |
Vgs(th) (Max) @ Id |
4V @ 900µA |
Supplier Device Package |
TO-3PFM |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Vgs (Max) |
+22V, -6V |
Drain to Source Voltage (Vdss) |
1700 V |
Gate Charge (Qg) (Max) @ Vgs |
14 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds |
184 pF @ 800 V |
N-Channel 1700 V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM