By: Rohm Semiconductor
N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N
Mfr. Part#:
SCT3080ALGC11
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Packaging |
Tube |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Operating Temperature |
175°C (TJ) |
Technology |
SiCFET (Silicon Carbide) |
Fet Type |
N-Channel |
Current - Continuous Drain (Id) @ 25°C |
30A (Tc) |
Rds On (Max) @ Id, Vgs |
104mOhm @ 10A, 18V |
FET Feature |
- |
Power Dissipation (Max) |
134W (Tc) |
Vgs(th) (Max) @ Id |
5.6V @ 5mA |
Supplier Device Package |
TO-247N |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Vgs (Max) |
+22V, -4V |
Drain to Source Voltage (Vdss) |
650 V |
Gate Charge (Qg) (Max) @ Vgs |
48 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds |
571 pF @ 500 V |
Product Description :
N-Channel 650 V 30A (Tc) 134W (Tc) Through Hole TO-247N