Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 50 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL) Published

By: Rohm Semiconductor

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 50 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL)

Mfr. Part#: DTC014EEBTL
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Packaging

Tape & Reel (TR)

Package / Case

SC-89, SOT-490

Mounting Type

Surface Mount

Transistor Type

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

35 @ 5mA, 10V

Supplier Device Package

EMT3F (SOT-416FL)

Current - Collector (Ic) (Max)

50 mA

Voltage - Collector Emitter Breakdown (Max)

50 V

Power - Max

150 mW

Frequency - Transition

250 MHz

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

10 kOhms

Product Description :

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 50 mA 250 MHz 150 mW Surface Mount EMT3F (SOT-416FL)

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