By: Alpha & Omega Semiconductor Inc.
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Packaging |
Tube |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Technology |
MOSFET (Metal Oxide) |
Fet Type |
N-Channel |
Current - Continuous Drain (Id) @ 25°C |
1.3A (Tc) |
Rds On (Max) @ Id, Vgs |
9Ohm @ 650mA, 10V |
FET Feature |
- |
Power Dissipation (Max) |
41.7W (Tc) |
Vgs(th) (Max) @ Id |
4.5V @ 250µA |
Supplier Device Package |
TO-220 |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Vgs (Max) |
±30V |
Drain to Source Voltage (Vdss) |
600 V |
Gate Charge (Qg) (Max) @ Vgs |
8 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds |
160 pF @ 25 V |
N-Channel 600 V 1.3A (Tc) 41.7W (Tc) Through Hole TO-220