N-Channel 650 V 11A (Tc) 31W (Tc) Through Hole TO-220F Published

By: Alpha & Omega Semiconductor Inc.

N-Channel 650 V 11A (Tc) 31W (Tc) Through Hole TO-220F

Mfr. Part#: AOTF11S65L
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Packaging

Tube

Package / Case

TO-220-3 Full Pack

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Rds On (Max) @ Id, Vgs

399mOhm @ 5.5A, 10V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Vgs(th) (Max) @ Id

4V @ 250µA

Supplier Device Package

TO-220F

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

650 V

Gate Charge (Qg) (Max) @ Vgs

13.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

646 pF @ 100 V

Product Description :

N-Channel 650 V 11A (Tc) 31W (Tc) Through Hole TO-220F

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