N-Channel 100 V 35.5A (Ta), 120A (Tc) 8.3W (Ta), 277W (Tc) Through Hole TO-220 Published

By: Alpha & Omega Semiconductor Inc.

N-Channel 100 V 35.5A (Ta), 120A (Tc) 8.3W (Ta), 277W (Tc) Through Hole TO-220

Mfr. Part#: AOT66916L
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Packaging

Tube

Package / Case

TO-220-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

35.5A (Ta), 120A (Tc)

Rds On (Max) @ Id, Vgs

3.6mOhm @ 20A, 10V

FET Feature

-

Power Dissipation (Max)

8.3W (Ta), 277W (Tc)

Vgs(th) (Max) @ Id

3.5V @ 250µA

Supplier Device Package

TO-220

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100 V

Gate Charge (Qg) (Max) @ Vgs

78 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

6180 pF @ 50 V

Product Description :

N-Channel 100 V 35.5A (Ta), 120A (Tc) 8.3W (Ta), 277W (Tc) Through Hole TO-220

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