P-Channel 30 V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC Published

By: Vishay Siliconix

P-Channel 30 V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC

Mfr. Part#: SI4425FDY-T1-GE3
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Packaging

Tape & Reel (TR)

Package / Case

8-SOIC (0.154", 3.90mm Width)

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Fet Type

P-Channel

Current - Continuous Drain (Id) @ 25°C

12.7A (Ta), 18.3A (Tc)

Rds On (Max) @ Id, Vgs

9.5mOhm @ 10A, 10V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 4.8W (Tc)

Vgs(th) (Max) @ Id

2.2V @ 250µA

Supplier Device Package

8-SOIC

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Vgs (Max)

+16V, -20V

Drain to Source Voltage (Vdss)

30 V

Gate Charge (Qg) (Max) @ Vgs

41 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

1620 pF @ 15 V

Product Description :

P-Channel 30 V 12.7A (Ta), 18.3A (Tc) 2.3W (Ta), 4.8W (Tc) Surface Mount 8-SOIC

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