N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4 Published

By: Infineon Technologies

N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Mfr. Part#: BSP149H6327XTSA1
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Packaging

Tape & Reel (TR)

Package / Case

TO-261-4, TO-261AA

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

660mA (Ta)

Rds On (Max) @ Id, Vgs

1.8Ohm @ 660mA, 10V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.8W (Ta)

Vgs(th) (Max) @ Id

1V @ 400µA

Supplier Device Package

PG-SOT223-4

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

200 V

Gate Charge (Qg) (Max) @ Vgs

14 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds

430 pF @ 25 V

Product Description :

N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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