N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN Published

By: Infineon Technologies

N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN

Mfr. Part#: IRF6644TRPBF
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Packaging

Tape & Reel (TR)

Package / Case

DirectFET™ Isometric MN

Mounting Type

Surface Mount

Operating Temperature

-40°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Fet Type

N-Channel

Current - Continuous Drain (Id) @ 25°C

10.3A (Ta), 60A (Tc)

Rds On (Max) @ Id, Vgs

13mOhm @ 10.3A, 10V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Vgs(th) (Max) @ Id

4.8V @ 150µA

Supplier Device Package

DIRECTFET™ MN

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100 V

Gate Charge (Qg) (Max) @ Vgs

47 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

2210 pF @ 25 V

Product Description :

N-Channel 100 V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN

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